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A Novel SR Latch Device Realized by Integration of Three-Terminal Ballistic Junctions in InGaAs/InP

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4 Author(s)
Jie Sun ; Div. of Solid State Phys., Lund Univ., Lund ; Wallin, Daniel ; Maximov, Ivan ; Xu, H.Q.

In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 6 )