Referenced Items are not available for this document.
In this letter, we report a novel n-channel GaAs MOSFET featuring TaN/HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regions. With the novel in situ surface passivation, excellent capacitance-voltage characteristics with low-frequency dispersion and small stretch-out can be achieved, indicating low interface state density. This surface-channel GaAs device exhibits excellent transistor output characteristics with a high drain current on/off ratio of 105 and a high peak electron mobility of 1230 cm2/V ldr s. In addition, gold contamination concerning CMOS technology can be alleviated with the successful integration of low-resistance PdGe ohmic contacts.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
6
)
Date of Publication: June 2008
- Page(s):
- 553 - 556
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10003001
- Digital Object Identifier :
- 10.1109/LED.2008.921393
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 20 May 2008
- Issue Date :
- June 2008
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
