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A 140dB-Dynamic-Range MOS Image Sensor with In-Pixel Multiple-Exposure Synthesis

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4 Author(s)
Takayoshi Yamada ; Matsushita Electric Industrial, Osaka, Japan ; Shigetaka Kasuga ; Takahiko Murata ; Yoshihisa Kato

In this work, we have developed an image sensor capable of shooting both dark- and bright-objects in one synthesized frame without necessitating any buffer memories. Multiply acquired signals with different exposure periods can be synthesized in each pixel, in which a feedback loop circuit is incorporated. The pixel feedback loop comprises a storage capacitor, a feedback capacitor and pass transistors. This configuration enables repetition of the image acquisition process, i.e. exposure, signal storage during the next exposure and synthesis of the successively exposed signals, as many times as needed.

Published in:

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

Date of Conference:

3-7 Feb. 2008