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An XPS Study on N Doped TiO2 Sol-Gel Thin Films

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6 Author(s)
Osiceanu, P. ; Ilie Murgulescu Inst. of Phys. Chem., Bucharest ; Anastasescu, M. ; Anastasescu, C. ; Trapalis, C.
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In this paper we report on a systematic XPS study on N doped TiO2 sol-gel thin films deposited by sol-gel technique. For this purpose, four kinds of multilayered TiO2 films thermally treated in O2 and NH3 at 500 and 600degC were deposited on quartz substrate by sol-gel & dipping method. A special attention has been focused on Nls and Ti2p photoelectron lines behaviour as a function of temperature and atmosphere of annealing process in order to investigate the features of the Ti-O-N bonds.

Published in:

Semiconductor Conference, 2007. CAS 2007. International  (Volume:2 )

Date of Conference:

Oct. 15 2007-Sept. 17 2007