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Emitter-Size Effects and Ultimate Scalability of InP:GaInP/GaAsSb/InP DHBTs

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4 Author(s)
Liu, H.G. ; Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol. Zurich, Zurich ; Ostinelli, O. ; Zeng, Y.P. ; Bolognesi, C.R.

Emitter-size effects (ESEs) are experimentally investigated in GaAsSb-based double heterojunction bipolar transistors (DHBTs) with a new InP:GaInP composite emitter. This letter reveals that both the extrinsic base surface recombination and the intrinsic space charge recombination directly under the emitter are effectively suppressed over a wide range of collector current densities by eliminating the type-II conduction band at the emitter-base heterojunction. The reduction of ESEs enables aggressive scaling and suggests that the GaInP/GaAsSb heterojunction could become a key enabling element for sub-100-nm terahertz bandwidth InP/GaAsSb DHBTs.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 6 )