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Amorphous gallium-indium-zinc-oxide (GIZO) thin film transistors with short channels of 50 nm were successfully fabricated by e-beam lithographic patterning. The GIZO thin film transistors showed a high mobility of 8.2 cm2/Vldrs with on-to-off current ratios up to 106. Excellent short channel characteristics were also obtained with a small shift of the threshold voltages and no degradation of subthreshold slopes as VDS increased, even with short channel lengths of less than 100 nm. These promising results indicate that the GIZO thin film transistors could be a candidate for selection transistors in 3-D cross point stacking memory.