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Cross Modulation & Modulation Distortion of RF Transistors

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1 Author(s)
Gerald E. Theriault ; Home Instruments Advanced Development Laboratory, Radio Corporation of America, Princeton, New Jersey

As transistors become available which are comparable with tubes with respect to gain and noise factor at vhf, an evaluation is necessary to establish their performance with respect to cross modulation and modulation distortion. This paper discusses cross modulation and modulation distortion measurements on available r-f transistors.

Published in:

IRE Transactions on Broadcast and Television Receivers  (Volume:BTR-8 ,  Issue: 2 )