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Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

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4 Author(s)
Jianhui Zhang ; United Silicon Carbide, Inc., Brunswick ; Xueqing Li ; Alexandrov, P. ; Zhao, J.H.

This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )