IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:29 Issue:5 Help

Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nayfeh, O.M. ; Massachusetts Inst. of Technol., Cambridge ; Ni Chleirigh, Cait ; Hoyt, J.L. ; Antoniadis, D.A.

Strained silicon-germanium (Si0.6Ge0.4) gated diodes have been fabricated and analyzed. The devices exhibit significantly enhanced gate-controlled tunneling current over that of coprocessed silicon control devices. The current characteristics are insensitive to measurement temperature in the 80 K to 300 K range. Independently extracted valence band offset at the strained Si0.6Ge0.4/Si interface is 0.4 eV, yielding a Si0.6Ge0.4 bandgap of 0.7 eV, which is much reduced compared to that of Si. The results are consistent with device operation based on quantum-mechanical band-to-band (BTB) tunneling rather than on thermal generation. Moreover, simulation of the strained Si0.6Ge0.4 device using a quantum-mechanical BTB tunneling model is in good agreement with the measurements.

Published in:
Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )

Date of Publication: May 2008

Page(s):
468 - 470
ISSN :
0741-3106
INSPEC Accession Number:
9922101
Digital Object Identifier :
10.1109/LED.2008.920280
Product Type:
Journals & Magazines
Date of Current Version :
22 April 2008
Issue Date :
May 2008
Sponsored by :
IEEE Electron Devices Society

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.