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P-Channel Tri-Gate FinFETs Featuring \hbox {Ni}_{1 - y}\hbox {Pt}_{y} \hbox {SiGe} Source/Drain Contacts for Enhanced Drive Current Performance

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7 Author(s)
Lee, R.T.-P. ; Nat. Univ. of Singapore, Singapore ; Kian-Ming Tan ; Lim, A.E.-J. ; Tsung-Yang Liow
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We report the integration of nickel platinum germanosilicide (Ni1-yPtySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni1-yPtySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni1-yPtySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (PhiP B) among the candidates evaluated. The low PhiP B(0.309 eV) provides a 15% reduction in series resistance Rseries. With a superior morphological stability and reduced Rseries, FinFETs integrated with contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.

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Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )