P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

We report the integration of nickel platinum germanosilicide (Ni
_1-y
Pt
_y
SiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni
_1-y
Pt
_y
SiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni
_1-y
Pt
_y
SiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Phi
_P

^B
) among the candidates evaluated. The low Phi
_P

^B
(0.309 eV) provides a 15% reduction in series resistance R
_series
. With a superior morphological stability and reduced R
_series
, FinFETs integrated with contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.