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A band-selective low-noise amplifier (BS-LNA) for multiband orthogonal frequency-division multiplexing ultra-wide-band (UWB) receivers is presented. A switched capacitive network that controls the resonant frequency of the LC load for the band selection is used. It greatly enhances the gain and noise performance of the LNA in each frequency band without increasing power consumption. Moreover, a fully differential configuration is employed to suppress the common-mode switching noise that is generated during the band transition interval. Fabricated in a 0.18-mum CMOS process, the BS-LNA achieves a peak power gain of 16 dB, a minimum noise figure of 2.74 dB, and an third-order input intercept point of -8.8 dBm at a current consumption of 7.95 mA from a 1.5-V supply. Little performance degradation is observed when the current consumption is reduced by half. The experimental results also show a worst-case band-switching time of less than 3.4 ns, with a peak switching noise voltage of less than 70 muV at the output.