By Topic

A high efficiency full-wave rectifier in standard CMOS Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Gaurav Bawa ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, USA ; Uei-Ming Jow ; Maysam Ghovanloo

In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mum 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 kOmega load, resulting in a measured power conversion efficiency of 85%.

Published in:

2007 50th Midwest Symposium on Circuits and Systems

Date of Conference:

5-8 Aug. 2007