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Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

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10 Author(s)
Koh, A.T.-Y. ; Nat. Univ. of Singapore, Singapore ; Lee, R.T.-P. ; Fang-Yue Liu ; Tsung-Yang Liow
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We report for the first time, the use of pulsed laser annealing (PLA) on multiple-gate field-effect transistors (MuGFETs) with silicon-carbon (Si1-xCx) source and drain (S/D) for enhanced dopant activation and improved strain effects. Si1-xCx. S/D exposed to consecutive laser irradiations demonstrated superior dopant activation with a ~60% reduction in resistivity compared to rapid thermal annealed S/D. In addition, with the application of PLA on epitaxially grown Si0.99C0.01 substitutional carbon concentration Csub increased from 1.0% (as grown) to 1.21%. This is also significantly higher than the Csub of 0.71% for rapid thermal annealed Si0.99C0.01 S/D. With a higher strain and enhanced dopant activation, MuGFETs with laser annealed Si0.99C0.01 S/D show a ~53% drain-current improvement compared to MuGFETs with rapid thermal annealed Si0.99C0.01 S/D.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )