Cart (Loading....) | Create Account
Close category search window
 

Improved All-Silicon Microcantilever Heaters With Integrated Piezoresistive Sensing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jungchul Lee ; Univ. of Illinois at Urbana-Champaign, Urbana ; King, W.P.

This paper presents the design, fabrication, and characterization of improved all-silicon microcantilever heaters with integrated piezoresistive sensing. The fabricated microcantilever heaters with piezoresistors are made solely from single crystal silicon with selective doping. Detailed characterization was performed to test the devices' electrical, thermal, and mechanical properties. The performance of and crosstalk between heater and piezoresistor elements were thoroughly tested. The resistive heater could reach temperatures of > 600degC, and its temperature coefficient of electrical resistance was (2.01 plusmn 0.04) times 10-3 Omega/Omega ldr degC. When biased at 2 V in a Wheatstone bridge, the deflection sensitivity of the piezoresistor was (4.25 plusmn 0.05) times 10-4 V/V ldr mum and remarkably, the heater circuit had a measurable deflection sensitivity of (7.9 plusmn 0.5) times 10-5 V/V ldr mum. Both the piezoresistor and the resistive heater were interfaced with a commercial atomic force microscope system to measure their sensitivities during topography imaging. The sensitivity of the thermal reading was much greater than that of piezoresistive reading. Noise-limited resolution of thermal reading was better than 0.46 plusmn 0.03 nm/radicHz and piezoresistive reading was better than 3.4 plusmn 0.4 nm/radicHz. This is the first experimental comparison between thermal and piezoresistive topographic sensing, both of which can replace optical lever sensing. Four cantilevers in an array demonstrated parallel topographic sensing with both the heater and the piezoresistor.

Published in:

Microelectromechanical Systems, Journal of  (Volume:17 ,  Issue: 2 )

Date of Publication:

April 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.