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A peak fT of 325 GHz is achieved, for the first time, in a 130 nm, 200 GHz, 3rd-generation SiGe HBT technology at 300 K, by utilizing fT-doubler techniques. This speed enhancement is equivalent to gaining an additional generational node (from 3rd to 4th), with no underlying change to the transistor profile or lithography. The fT-doubler can be treated as a single transistor unit cell during circuit design, which is verified by the investigation of its small-signal equivalent circuit. Reduced Cpi is demonstrated to be the root origin of the fT-enhancement. The impact of emitter geometry on performance is investigated. A record fT of 438 GHz is achieved at 93 K.