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Browse Journals & Magazines > Nanotechnology, IEEE Transact ...> Volume:7 Issue:2 Help

Characterization of Domain Switching Behavior of MTJ Cells Using Magnetic Force Microscopy (MFM) and R–H Loop Analysis

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4 Author(s)
Jinhee Heo ; Korea Sci. & Eng. Found., Daejeon ; Kyohyeok Kim ; Taewan Kim ; Ilsub Chung

Correlation between electrical and magnetic properties of magnetic tunnel junctions (MTJ) for magnetic random access memory (MRAM) was studied. The MTJ (Ta/NiFeCr/ PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe/Ta) was analyzed by utilizing R-H loops and MFM images. We verified that a kink in an R-H loop comes from a vortex domain of free layer. In addition, we also observed a close relationship between a domain switching behavior and an irregular R-H curve. These results would be useful for the characterization of the MTJ cell, thereby optimizing the process to realize an ultrahigh density MRAM.

Published in:
Nanotechnology, IEEE Transactions on  (Volume:7 ,  Issue: 2 )

Date of Publication: March 2008

Page(s):
169 - 171
ISSN :
1536-125X
INSPEC Accession Number:
9920279
Digital Object Identifier :
10.1109/TNANO.2008.917842
Product Type:
Journals & Magazines
Date of Current Version :
14 March 2008
Issue Date :
March 2008
Sponsored by :
IEEE Nanotechnology Council

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