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High Performance Inductors on CMOS-Grade Trenched Silicon Substrate

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3 Author(s)
Rais-Zadeh, M. ; Georgia Inst. of Technol., Atlanta ; Laskar, J. ; Ayazi, F.

This paper reports on a new implementation of high-quality factor copper inductors on CMOS-grade silicon substrates (p = 10-20 Omega ldr cm) using a CMOS-compatible process. A low-temperature fabrication sequence (<300degC) is used to reduce the loss in silicon at RF frequencies by trenching the silicon substrate. The high aspect-ratio (30:1) trenches are subsequently bridged over or refilled with a low-loss dielectric to close the open areas and create a rigid low-loss island, referred to as Trenched Si Island. This method does not require air suspension of the inductors, resulting in mechanically-robust structures that are compatible with any packaging technology. A one-turn 0.8 nH inductor fabricated on a Trenched Silicon Island exhibits a very high peak quality factor of 71 at 8.75 GHz with a self-resonant frequency larger than 15 GHz.

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Components and Packaging Technologies, IEEE Transactions on  (Volume:31 ,  Issue: 1 )