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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

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28 Author(s)
Kwang-Jin Lee ; Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do ; Beak-Hyung Cho ; Woo-Yeong Cho ; Sangbeom Kang
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A 512 Mb diode-switch PRAM has been developed in a 90 nm CMOS technology. The vertical diode-switch using the SEG technology has achieved minimum cell size and disturbance-free core operation. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are proposed. The 512 Mb PRAM has achieved read throughput of 266 MB/s through the proposed schemes. The write throughput was 0.54 MB/s in internal x2 write mode, and increased to 4.64 MB/s with x16 accelerated write mode at 1.8 V supply.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:43 ,  Issue: 1 )