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Development of Single-Transistor-Control LDO Based on Flipped Voltage Follower for SoC

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5 Author(s)
Tsz Yin Man ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong ; Ka Nang Leung ; Chi Yat Leung ; Philip K. T. Mok
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The design issues of a single-transistor-control (STC) low-drop-out (LDO) based on flipped voltage follower is discussed in this paper, in particular the feedback stability at different conditions of output capacitors, equivalent series resistances (ESRs) and load current. Based on the analysis, an STC LDO was implemented in a standard 0.35-mum MOS technology. It is proven experimentally that the LDO provides stable voltage regulation at a variety of output-capacitor/ESR conditions and is also stable in no output capacitor condition. The preset output voltage, minimum unregulated input voltage, maximum output current at a dropout voltage of 200 mV, ground current and active chip area are 1 V, 1.2 V, 50 mA, 95 muA, and 140 mum times 320 mum, respectively. The full-load transient response in the no output capacitor case is faster than a micro second and is about 300 ns.

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IEEE Transactions on Circuits and Systems I: Regular Papers  (Volume:55 ,  Issue: 5 )