By Topic

Process compensated micromechanical resonators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Gavin K. Ho ; School of Electrical and Computer Engineering, Georgia Institute of Technology, USA ; John K. C. Perng ; Farrokh Ayazi

Manufacturability and yield are the major challenges prior to adoption of micromechanical resonators as frequency references. In this paper, a design for manufacturability (DFM) technique to achieve absolute frequency accuracy is presented. Non-idealities of a deep reactive ion etching process are examined and determined to be random. The variations in resonator geometry are assumed to be locally systematic and are represented as a process bias. The effect of process bias on resonator center frequency is modeled and the procedure for optimizing for zero sensitivity is explained. Process bias on a 10 MHz optimized design was replicated with electron-beam lithography and supporting data demonstrating DFM is reported.

Published in:

Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on

Date of Conference:

21-25 Jan. 2007