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A quantitative RE-O interface dipole model was presented to explain Ni-FUSI Phim using RE-based interlayers (REIL). The expected strengths of interface RE-O dipole and extracted Phim values show excellent correlation. It further demonstrates that the NiSi Phim on high- k dielectrics can be engineered by the insertion of thin REIL at the high-k/SiO2 interface.
Date of Conference: 12-14 Dec. 2007