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InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation

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10 Author(s)
Chang, Y.C. ; Nat. Tsing Hua Univ., Hsinchu ; Huang, M.L. ; Lee, Y.J. ; Lee, K.Y.
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In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO2. However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-EG and C-V characteristics of ALD-HfO2/In0.53Ga0.47As/InP have been demonstrated in this work.

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Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007

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