InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation

In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO
₂
. However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-E
_G
and C-V characteristics of ALD-HfO
₂
/In
_0.53
Ga
_0.47
As/InP have been demonstrated in this work.