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Dielectric-Parameter Measurements of SiC at Millimeter and Submillimeter Wavelengths

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3 Author(s)
Shu Chen ; Tufts Univ., Medford ; Afsar, M.N. ; Sakdatorn, D.

High-precision continuous spectra of the absorption coefficient, refractive index, complex dielectric permittivity, and loss tangent for several silicon carbide (SiC) specimens are reported in this paper over a broad millimeter- and submillimeter-wave range for the first time. Measurements have been successfully performed using three different types of specially constructed spectrometer systems: a dispersive Fourier transform spectroscopy, an automated 60-GHz open resonator, and a free-space quasi-optical millimeter-wave spectrometer equipped with high-power backward-wave oscillator sources and their associated state-of-the-art dielectric-measurement techniques. Data are presented as continuous functions of frequency from 30 to 600 GHz. The employment of various measurement systems and techniques ensured the measurement of polycrystalline SiC specimens with various degrees of absorption and dispersion characteristics over an extended frequency range with high precision. Results presented here provide comprehensive information of SiC on its optical and dielectric behavior as a function of frequency and purity for its potential application in semiconductor and radio-frequency devices and circuits. An error analysis of measured dielectric-parameter results is also provided.

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Instrumentation and Measurement, IEEE Transactions on  (Volume:57 ,  Issue: 4 )