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A new 45 nm multiple time programming (MTP) cell with self-aligned nitride storage node has been proposed for logic NVM applications. The CMOS fully logic compatible cell has been successfully demonstrated in 45 nm CMOS technology with an ultra small cell size of 0.14 mum2. This cell adapting source side injection programming scheme has a wide on/off window and superior program efficiency. And it also exhibits excellent data retention capability even when logic gate oxide is less than 20 Aring with 45 nm gate length. This new cell provides a promising solution for logic NVM beyond 90 nm node.