By Topic

Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)

We show that the mobility degradation at low fields is predominantly due to a dipole layer intrinsically formed at the HfO2/SiO2 interface. This dipole layer is also responsible for the anomalousVFB (VTH) shift in high-k MOSFETs. Contribution of remote phonon scattering to the mobility degradation is very little, as revealed by comparing the mobility behaviors for MOSFETs with different crystal symmetry of HfO2 dielectrics.

Published in:

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Date of Conference:

10-12 Dec. 2007