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A Novel Via-fuse Technology Featuring Highly Stable Blow Operation with Large On-off Ratio for 32nm Node and Beyond

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4 Author(s)
H. Takaoka ; Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229-1198, Japan ; T. Ueda ; H. Tsuda ; A. Ono

We have developed a novel e-fuse technology utilizing a Cu-via for the first time. Due to its unique structure and crack-assisted mechanism, void formation locations can be effectively confined to the via-metal interface, enabling highly stable operation as well as a large on-off ratio of 7 orders of magnitude. We have confirmed a sub-10 ppm initial-failure rate and a sub-20 ppm failure rate after thermal stability test equivalent to the thermal stress during the practical packaging process. We believe that this technology is indispensable for the 32 nm technology node and beyond, where metal material is commonly used as a poly-gate, rendering it unsuitable for fuse devices.

Published in:

2007 IEEE International Electron Devices Meeting

Date of Conference:

10-12 Dec. 2007