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Advances in semiconductor nanostructures are reviewed to clarify their importance in electronics and photonics. First 10 nm-scale FET channels, quantum wells, and related systems are discussed to show how the quantum confinement of electrons in such structures is controlled to maximize performances of FETs, lasers, and other core devices and to create quantum devices, such as resonant tunneling diodes and intersubband infrared devices. We then examine potentials of quantum dots and wires, by which electronic motions are further restricted to provide various new properties and functions.
Date of Conference: 10-12 Dec. 2007