By Topic

PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Wu, W. ; Arizona State Univ., Tempe ; Li, X. ; Gildenblat, G. ; Workman, G.
more authors

This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including a floating body simulation capability, a parasitic bipolar model, and self-heating. A nonlinear body resistance is included for modeling body-contacted SOI devices. The PSP-SOI model has been extensively tested on several PD/SOI technologies.

Published in:

Custom Integrated Circuits Conference, 2007. CICC '07. IEEE

Date of Conference:

16-19 Sept. 2007