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For the first time, a nested-ring Mach-Zehnder interferometer (MZI) on silicon-on-insulator is realized using a complementary metal-oxide-semiconductor-based process. In this letter, we verify that the device operates in two modes: the inner-loop resonance dominant mode due to strong build-up inside the inner-ring, and the double-Fano resonances mode due to strong light interaction with the outer loop. The results show that the inner-loop resonance is highly sensitive to the MZI arm imbalance compared to the double-Fano resonance mode. Based on these considerations, we obtain a good fit between theory and experiment.