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A 250W S-Band GaN HEMT Amplifier

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6 Author(s)
Krishnamurthy, K. ; RF Micro Devices Inc., Charlotte ; Poulton, M.J. ; Martin, J. ; Vetury, R.
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We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10% duty cycle and 20mus pulse width. To our knowledge this is one of the widest bandwidth reported at this power level and frequency. These amplifiers are targeted for wideband digital cellular infrastructure; satellite communication, avionics and ISM band applications.

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Date of Conference:

14-17 Oct. 2007