Referenced Items are not available for this document.
The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.
Published in:
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Date of Conference: 14-17 Oct. 2007
- Page(s):
- 1 - 4
- Print ISBN:
- 978-1-4244-1022-4
- INSPEC Accession Number:
- 9778216
- Conference Location :
- Portland, OR
- Digital Object Identifier :
- 10.1109/CSICS07.2007.13
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
