Referenced Items are not available for this document.
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.
Published in:
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Date of Conference: 2-5 Oct. 2007
- Page(s):
- 1 - 10
- E-ISBN :
- 978-1-4244-1228-0
- Print ISBN:
- 978-1-4244-1228-0
- INSPEC Accession Number:
- 9707681
- Conference Location :
- Catania, Sicily
- Digital Object Identifier :
- 10.1109/RTP.2007.4383811
- Product Type:
- Conference Publications
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