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Highly Reliable High-Brightness GaN-Based Flip Chip LEDs

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10 Author(s)
S. J. Chang ; Nat. Cheng Kung Univ., Tainan ; W. S. Chen ; S. C. Shei ; T. K. Ko
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The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studied. It was found that 300degC rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.

Published in:

IEEE Transactions on Advanced Packaging  (Volume:30 ,  Issue: 4 )