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A 1.92 μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors

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8 Author(s)
Kazuki Fukuoka ; Renesas Technology Corp., 5-20-1 Josuihon-cho Kodaira, Tokyo 187-8588, Japan, Phone: +81-42-312-5159, E-mail: ; Osamu Ozawa ; Ryo Mori ; Yasuto Igarashi
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A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing the variation of rush current on PVT allows shorter wake-up times, which can reduce leakage currents in a mobile processor. Wake-up takes 1.92 μs and leakage current is reduced by 96.9% in an application CPU domain. Probing the rush current indicated accurate control by the technique.

Published in:

2007 IEEE Symposium on VLSI Circuits

Date of Conference:

14-16 June 2007