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Proton radiation effects on medium/large area Si PIN photodiodes for Optical Wireless Links for Intra-Satellite Communications (OWLS)

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8 Author(s)
J. J. Jimenez ; Laboratorio de Optoelectrónica ¿ Instituto Nacional de Técnica Aeroespacial (INTA) ¿ 28850 Torrejón de Ardoz - SPAIN. phone: +34 91 520 2093; fax: +34 91 520 1065; e-mail: ; J. Sanchez-Paramo ; M. T. Alvarez ; J. A. Dominguez
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Components off the shelf (cots) photodiodes suitable for OWLS were irradiated with ~10 to ~60 MeV protons and up to fluences of ~2.5-1012 p/cm2. Electrical and optoelectronic parameters were measured during the test (I-V curves, dark current, responsivity and ideal diode factor). Results on degradation and post-annealing are reported. Preliminary results on the lattice effects are also pointed.

Published in:

2007 IEEE Radiation Effects Data Workshop  (Volume:0 )

Date of Conference:

23-27 July 2007