By Topic

SiC vs. Si for High Radiation Environments

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Richard D. Harris ; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 USA, telephone: 818-393-6872, e-mail:

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4times1014 p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. Calculation of carrier removal rates in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Published in:

2007 IEEE Radiation Effects Data Workshop  (Volume:0 )

Date of Conference:

23-27 July 2007