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Experimental Evaluation of SiC PiN Diode Forward Bias Degradation and Long Term Stability

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5 Author(s)
Hernandez-Mora, M. ; Nat. Inst. of Stand. & Technol., Gaithersburg ; Adwoa Akuffo ; Hood, C. ; Ortiz-Rodriguez, J.M.
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New automated measurement systems and test procedures are presented that enable the evaluation of long-term stability of SiC PiN diodes. Long-term stability results are presented for 10 kV SiC PiN diodes that are made using a new fabrication technology developed to eliminate the source of the degradation. The major objectives of the long-term stability test procedures are to monitor the forward on-state voltage degradation and current area reduction for different forward bias stress levels. Three experimental systems have been used to perform the long-term stability study. Results show that it is possible for SiC diodes to perform acceptably after over 2000 hours of forward bias stress time.

Published in:

Power Electronics Specialists Conference, 2007. PESC 2007. IEEE

Date of Conference:

17-21 June 2007