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An empirical model for the L/sub eff/ dependence of hot-carrier lifetimes of n-channel MOSFETs

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2 Author(s)
K. Mistry ; Digital Equipment Corp., Hudson, MA, USA ; B. S. Doyle

An empirical model that describes the dependence of hot-carrier lifetime on the effective channel length of an n-channel MOSFET, allowing the estimation of the lifetimes of transistors of a given length based on data from a limited number of channel lengths, is presented. The model takes into account the localization of hot-carrier induced damage and shows that the size of the damaged region relative to the total length of the transistor is important in determining the effect of hot-carrier-damage-induced transistor characteristics. The results are integrated into two commonly used equations for hot-carrier lifetimes of MOSFETs of a given channel length under DC operation. The model is experimentally verified for MOSFETs of effective channel lengths between 0.45 and 2.7 mu m.<>

Published in:

IEEE Electron Device Letters  (Volume:10 ,  Issue: 11 )