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1.54 μm Monolithically Integrated GaSb Quantum Well Laser Diode on Silicon Operating at 77K

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9 Author(s)

We present a GaSb quantum well laser diode grown monolithically on a Si(100)-5° substrate. The device lases under pulsed, 77 K conditions at 1.54 μm with threshold current density of 1 kA/cm2 for a 100 μm times 1 mm stripe.

Published in:

Nano-Optoelectronics Workshop, 2007. i-NOW '07. International

Date of Conference:

July 29 2007-Aug. 11 2007

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