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1.54 μm Monolithically Integrated GaSb Quantum Well Laser Diode on Silicon Operating at 77K

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9 Author(s)
Huffaker, D.L. ; New Mexico Univ., Albuquerque ; Balakrishnan, G. ; Jallipalli, A. ; Kutty, M.N.
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We present a GaSb quantum well laser diode grown monolithically on a Si(100)-5° substrate. The device lases under pulsed, 77 K conditions at 1.54 μm with threshold current density of 1 kA/cm2 for a 100 μm times 1 mm stripe.

Published in:
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International

Date of Conference: July 29 2007-Aug. 11 2007

Page(s):
16 - 17
Print ISBN:
978-1-4244-1591-5
INSPEC Accession Number:
9798633
Conference Location :
Beijing
Digital Object Identifier :
10.1109/INOW.2007.4302845
Product Type:
Conference Publications

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