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A Novel Deep Hole Etching in NLD Plasma Low GWP Gases

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3 Author(s)
Morikawa, Y. ; ULVAC Inc., Shizuoka ; Murayama, T. ; Suu, K.

As for etching of quartz or glass, CF4 and C3F8 and C4F8 are mainly used. And, much SF6 gas is used for etching of silicon. The case that uses together a C4F8-CVD method is also in sidewall protection film formation. However, these gases have a very large GWP. Since a MEMS market becomes larger in the future, the gas used by DRIE needs the reduction in GWP. This research is developing quartz etching technology, and succeeded in etching of the GWP free etching of Pyrex glass via using C3F7I. Furthermore, the method of performing anisotropic deep silicon etching by introducing a sputtering system into DRIE technology was invented, and C4F8 free etching anisotropic etching was also successful. Therefore, the NLD etching in the MEMS field is very useful equipment, which can realize drastic GWP reduction and can propose highly efficient etching technology.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Date of Conference:

10-14 June 2007