Referenced Items are not available for this document.
Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.
Published in:
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Date of Conference: 10-14 June 2007
- Page(s):
- 81 - 84
- E-ISBN :
- 1-4244-0842-3
- Print ISBN:
- 1-4244-0842-3
- INSPEC Accession Number:
- 9828425
- Conference Location :
- Lyon
- Digital Object Identifier :
- 10.1109/SENSOR.2007.4300076
- Product Type:
- Conference Publications
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