Referenced Items are not available for this document.
This paper presents the evolution of the DRIE of silicon over the last decade. Starting with the initial MEMS product requirements, the DRIE demonstrated its potential to improve the delivered performances in line with the evolution of the Microsystems requirements. In less than a decade, the DRIE etching rate and aspect ratio have been multiplied by an impressive factor of 10. This outstanding capabilities favored its adoption in new microelectronic applications which lead to a step forward in the development of an extended range of tools and processes. As a result, the Microsystems will benefit from those latest developments.
Published in:
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Date of Conference: 10-14 June 2007
- Page(s):
- 77 - 80
- E-ISBN :
- 1-4244-0842-3
- Print ISBN:
- 1-4244-0842-3
- INSPEC Accession Number:
- 9828424
- Conference Location :
- Lyon
- Digital Object Identifier :
- 10.1109/SENSOR.2007.4300075
- Product Type:
- Conference Publications
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