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This paper describes an advanced critical dimension (CD) control technology for a 65-nm node dual damascene process and beyond. A newly developed deposition enhanced shrink etching (DESE) process was introduced into both via and trench etching. This technology realizes not only dynamic via shrink ranging 40 nm but also accurate trench CD control by feedforward technology. Etching performance was investigated by electrical results of 65-nm Cu/low-k interconnects using porous chemical-vapor deposition SiOC. The 100% yields of 60-M via chains verified the DESE process robustness.