Cart (Loading....) | Create Account
Close category search window

Advanced CD Control Technology for 65-nm Node Dual Damascene Process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Nagase, M.. ; NEC Electron. Corp., Kanagawa ; Maruyama, T.. ; Sekine, M.

This paper describes an advanced critical dimension (CD) control technology for a 65-nm node dual damascene process and beyond. A newly developed deposition enhanced shrink etching (DESE) process was introduced into both via and trench etching. This technology realizes not only dynamic via shrink ranging 40 nm but also accurate trench CD control by feedforward technology. Etching performance was investigated by electrical results of 65-nm Cu/low-k interconnects using porous chemical-vapor deposition SiOC. The 100% yields of 60-M via chains verified the DESE process robustness.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:20 ,  Issue: 3 )

Date of Publication:

Aug. 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.