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ldquoStealth dicing (SD)rdquo was developed to solve inherent problems of a dicing process such as debris contaminants and unnecessary thermal damages on a work wafer. A completely dry process is another big advantage over other dicing methods. In SD, the laser beam power of transmissible wavelength is absorbed only around focal point in the wafer by utilizing the temperature dependence of the absorption coefficient of the wafer. The absorbed power forms a modified layer in the wafer, which functions as the origin of separation in the separation process. In this paper, we applied this method for an ultra-thin wafer. The reliability of devices that is diced by SD was confirmed.