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Thin SiGe-channel confinement is found to provide significant control of the short channel effects typically associated with nonbandedge gate electrodes, in an analogous manner to ultrathin-body approaches. Gate workfunction requirements for thin-SiGe-channel p-type field effect transistors are therefore relaxed substantially more than what is expected from a simple observation of the difference between gate and channel workfunctions. In particular, thin-SiGe channels are shown to enable cost-effective high-performance bulk CMOS technologies with a single gate workfunction near the conduction bandedge. Buried channel, gate workfunction, metal gate, SiGe-channel confinement effects, SiGe-channel MOSFET, silicon germanium, ultrathin-body (UTB).