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Methods for extracting threshold-voltage shift (DeltaVth) in high-kappa transistors using the single-pulse drain current-gate voltage (Id-Vg) technique were compared with respect to their accuracies and limitations. It is concluded that an accurate estimation of the (DeltaVth) caused by charge trapping in high-kappa dielectrics can be obtained from the hysteresis of the pulsed (Id-Vg) curve with proper calibration of the pulse measurement to account for the propagation delay. The (DeltaVth) extraction that is based on the decrease of drain current during a pulse tends to underestimate charge trapping for higher pulse amplitudes.
Date of Publication: Aug. 2007