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SiGe Channel CMOSFETs Fabricated on (110) Surfaces with TaC/HfO2 Gate Stacks

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7 Author(s)
Liu, P.W. ; United Microelectron. Corp., Hsinchu ; Lin, Y.H. ; Chiang, W.T. ; Tsai, C.H.
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The promising potential of SiGe channel for next generation CMOSFETs applications has been demonstrated on (110) surfaces. SiGe channel CMOSFETs with TaC/FffO2 gate stack were fabricated on (110) surfaces for the first time. By introducing SiGe for channel material, the mobility of n/p-MOSFETs with TaC/HfO2 gate stacks can be greatly improved compared to Si channel devices with the same metal-gate/high-K gate stacks. The (110) SiGe channel n/p-MOSFETs with TaC/FffO2 gate stacks show 1.8x and 2.4x mobility enhancements over (110) Si devices with TaC/HfO2. The 23% propagation time delay improvement of ring oscillators fabricated with (110) SiGe channel CMOSFETs and poly/oxynitride gate stacks also proves the feasibility of (110) SiGe channel.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007