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The promising potential of SiGe channel for next generation CMOSFETs applications has been demonstrated on (110) surfaces. SiGe channel CMOSFETs with TaC/FffO2 gate stack were fabricated on (110) surfaces for the first time. By introducing SiGe for channel material, the mobility of n/p-MOSFETs with TaC/HfO2 gate stacks can be greatly improved compared to Si channel devices with the same metal-gate/high-K gate stacks. The (110) SiGe channel n/p-MOSFETs with TaC/FffO2 gate stacks show 1.8x and 2.4x mobility enhancements over (110) Si devices with TaC/HfO2. The 23% propagation time delay improvement of ring oscillators fabricated with (110) SiGe channel CMOSFETs and poly/oxynitride gate stacks also proves the feasibility of (110) SiGe channel.
Date of Conference: 23-25 April 2007