Cart (Loading....) | Create Account
Close category search window
 

Higher Permittivity Rare Earth-Doped HfO2 and ZrO2 Dielectrics for Logic and Memory Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

14 Author(s)

We demonstrate electrical properties of rare earth (RE)-doped HfO2 and ZrO2 for application as higher permittivity (k) dielectrics in logic and memory devices. X-ray diffraction (XRD) results show that Dy, Er, and Gd doping stabilizes the higher-k tetragonal phase rather than the lower-k monoclinic phase. This preferred tetragonal phase results in a k~30. Initial electrical results show ~3 nm higher-k enables an equivalent oxide thickness (EOT) of 0.93 nm. Alternatively, ~7nm higher-k reduces leakage currents 1000x relative to HfO2 achieving <10-8 A/cm2 at an EOT of 2 nm. Capacitance-voltage (C-V) data show increasing amounts of RE dopants shift flatband voltage (Vft) in the negative direction vs. pure HfO2.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.